Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden–Popper Perovskites for Non-volatile Memories

The Journal of Physical Chemistry Letters, 2020, 11, 463-470.

Solanki, A.; Guerrero, A.; Zhang, Q.; Bisquert, J.; Sum, T.Chien

Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden–Popper Perovskites for Non-volatile Memories.

Article page: https://pubs.acs.org/doi/10.1021/acs.jpclett.9b03181