Santhosh Kumar Karunakaran

Bio and research interests
Santhosh Kumar earned his M.Sc. in Physics (2009) and Ph.D. (2014) from Annamalai University, India. He has since worked at several renowned international research universities and institutions including Southeast University, China (2015-2018), Sun Yat-Sen University, China (2018-2020), and IMDEA Nanociencia, Madrid (2023-2025). Starting in April 2025, he joined the Group of Advanced Semiconductors (GAS) at the Institute of Advanced Materials (INAM) as a postdoctoral researcher. His research focuses on the synthesis of low-dimensional halide perovskite materials for high-efficiency and stable solar cells, LEDs, photodetectors, and more. He has published 27 articles in peer-reviewed international journals, with 940 citations and h-index of 16. Additionally, one Chinese patent was granted for “Down-conversion process of a near-infrared luminescence yttrium aluminum garnet fluorescent material” to improve the efficiency of silicon solar cells. Moreover, he successfully completed three national level projects (China) as a principal investigator based on the applications of optoelectronics.