Hysteresis Control in Hybrid Perovskite-based Devices for Photovoltaic and Neuromorphic Computing Applications

Perovskite solar cells have been rapidly advancing in record efficiencies at an unprecedented rate already approaching the theoretical maximum efficiency in just over a decade of development. Most notably, perovskites exhibit intrinsic hysteretic effect which can be exploited for memory devices or memristors emulating the synaptic functions of the brain circumventing the physical limits of conventional computing architecture. In this thesis, we demonstrate hysteresis control in perovskite memristors by incorporating a thin Ag layer, establish the correlation of the IS response with the normal and inverted hysteresis, demonstrate a perovskite solar cell exhibiting a transformation from a normal capacitive to an inverted inductive hysteresis, and modulated the resistive switching of perovskite memristors exhibiting a two-step set process. This understanding of the dynamic ionic transport, in conjunction with the electronic transport, provides the necessary insight to control the hysteresis response of perovskite-based devices specifically suited for the targeted optoelectronic application.